سامانه مدیریت نشریات علمی دانشگاه دامغان

اسدپور ارزفونی, عالمه, ایزدی فرد, مرتضی, ابراهیم قاضی, محمد, عرب‌پور, فرزانه. (1404). بررسی ویژگی‌های ساختاری و نوری و الکتریکی لایه‌های نازک پروسکایتی C‌H3NH3SnICl2 و CH(NH2)2SnICl2 سنتز شده به روش پوشش‌دهی چرخشی تک‌مرحله‌ای. مجله زمین شیمی ایران, 29(4), 919-932. doi: 10.52547/ijcm.29.4.919
عالمه اسدپور ارزفونی; مرتضی ایزدی فرد; محمد ابراهیم قاضی; فرزانه عرب‌پور. "بررسی ویژگی‌های ساختاری و نوری و الکتریکی لایه‌های نازک پروسکایتی C‌H3NH3SnICl2 و CH(NH2)2SnICl2 سنتز شده به روش پوشش‌دهی چرخشی تک‌مرحله‌ای". مجله زمین شیمی ایران, 29, 4, 1404, 919-932. doi: 10.52547/ijcm.29.4.919
اسدپور ارزفونی, عالمه, ایزدی فرد, مرتضی, ابراهیم قاضی, محمد, عرب‌پور, فرزانه. (1404). 'بررسی ویژگی‌های ساختاری و نوری و الکتریکی لایه‌های نازک پروسکایتی C‌H3NH3SnICl2 و CH(NH2)2SnICl2 سنتز شده به روش پوشش‌دهی چرخشی تک‌مرحله‌ای', مجله زمین شیمی ایران, 29(4), pp. 919-932. doi: 10.52547/ijcm.29.4.919
اسدپور ارزفونی, عالمه, ایزدی فرد, مرتضی, ابراهیم قاضی, محمد, عرب‌پور, فرزانه. بررسی ویژگی‌های ساختاری و نوری و الکتریکی لایه‌های نازک پروسکایتی C‌H3NH3SnICl2 و CH(NH2)2SnICl2 سنتز شده به روش پوشش‌دهی چرخشی تک‌مرحله‌ای. مجله زمین شیمی ایران, 1404; 29(4): 919-932. doi: 10.52547/ijcm.29.4.919

بررسی ویژگی‌های ساختاری و نوری و الکتریکی لایه‌های نازک پروسکایتی C‌H3NH3SnICl2 و CH(NH2)2SnICl2 سنتز شده به روش پوشش‌دهی چرخشی تک‌مرحله‌ای

مجله بلورشناسی و کانی شناسی ایران
مقاله 15، دوره 29، شماره 4 - شماره پیاپی 84، دی 1400، صفحه 919-932    اصل مقاله (1.33 M)
شناسه دیجیتال (DOI): 10.52547/ijcm.29.4.919
نویسندگان
عالمه اسدپور ارزفونی1؛ مرتضی ایزدی فرد* 1؛ محمد ابراهیم قاضی1؛ فرزانه عرب‌پور2
1دانشگاه صنعتی شاهرود
2دانشگاه تربیت مدرس
چکیده
لایه­های نازک پروسکایتی  CH3NH3SnICl2 (MASnICl2)  و  CH(NH2)2SnICl2 (FASnICl2)  به روش پوشش­دهی­چرخشی­تک مرحله­ای بر زیر لایه­های شیشه­ای نهشته شدند و ویژگی­های ساختاری ، نوری و الکتریکی آنها بررسی گردید. مشخصه یابی ساختاری این لایه­ها نشان داد که همه آنها دارای ساختار چارگوشی پروسکایت (فاز (α هستند و با تغییر کاتیون­های آلی CH(NH2)2I ((FAI وCH3NH3I  (MAI)کیفیت بلورینگی و ریخت سطح نمونه­ها به طور محسوسی تغییر می­کنند. اثر این تغییرات بر ویژگی­های الکتریکی و نوری لایه­ها نیز دیده شد. لایه­های پروسکایتی تهیه شده دارای ضریب جذب بالایی (از مرتبه cm-1105) در ناحیه مرئی بودند. گاف انرژی لایه­ها محاسبه شده براساس رابطه تائوک برای لایه FASnICl2 برابر با eV 48/1 و برای لایه  MASnICl2 برابر باeV  54/1 است. در طیف نورتابی (PL) هر دو لایه پروسکایتی در دمای اتاق یک قله به نسبت شدید نزدیک گاف انرژی لایه­ها دیده شد که شدت آن در لایه FASnICl2 به طور قابل توجهی بیشتر از لایه MASnICl2 بود. نتایج نشان داد که لایه پروسکایتی FASnICl2 سنتز شده دارای ساختار بلورین بهتر، مقاومت الکتریکی کمتر، حساسیت و پاسخ نوری مناسب­تر در مقایسه با لایه MASnICl2 است و می­تواند گزینه­ مناسبی برای استفاده به عنوان لایه جاذب در سلول­های خورشیدی باشد.      
کلیدواژه‌ها
لایه‌های جاذب پروسکایتی؛ روش پوشش‌دهی چرخشی تک مرحله‌ای؛ ویژگی‌های ساختاری؛ ویژگی‌های نوری؛ پاسخ نوری؛ CH3NH3SnICl2؛ CH(NH2)2SnICl2
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